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BAS28 Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BAS28
Description  High-speed double diode
PDF  7 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS28 Fiches technique(HTML) 2 Page - NXP Semiconductors

  BAS28 Datasheet HTML 1Page - NXP Semiconductors BAS28 Datasheet HTML 2Page - NXP Semiconductors BAS28 Datasheet HTML 3Page - NXP Semiconductors BAS28 Datasheet HTML 4Page - NXP Semiconductors BAS28 Datasheet HTML 5Page - NXP Semiconductors BAS28 Datasheet HTML 6Page - NXP Semiconductors BAS28 Datasheet HTML 7Page - NXP Semiconductors  
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1996 Sep 10
2
Philips Semiconductors
Product specification
High-speed double diode
BAS28
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA .
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS28 consists of two
high-speed switching diodes,
fabricated in planar technology, and
encapsulated in the small plastic
SMD SOT143 package. The diodes
are not connected.
PINNING
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
anode (a2)
4
anode (a1)
Fig.1 Simplified outline (SOT143) and symbol.
Marking code: JTp.
handbook, halfpage43
2
1
Top view
MAM059
2
3
4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
85
V
VR
continuous reverse voltage
−
75
V
IF
continuous forward current
see Fig.2; note 1
−
215
mA
IFRM
repetitive peak forward current
−
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
µs
−
4A
t=1ms
−
1A
t=1s
−
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C



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