BAS16T datasheet(2/12 Pages) PHILIPS

2 / 12 page

1998 Jan 20

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS16T

FEATURES

• Very small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 500 mA.

APPLICATIONS

• High-speed switching in e.g.

surface mounted circuits.

DESCRIPTION

The BAS16T is a high-speed

switching diode fabricated in planar

technology, and encapsulated in the

very small plastic SMD SOT416

(SC-75) package.

PINNING

DESCRIPTION

anode

not connected

cathode

Fig.1 Simplified outline (SOT416; SC-75) and symbol.

Marking code: A6.

handbook, 4 columns

Top view

MAM393

n.c.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VRRM

repetitive peak reverse voltage

−

continuous reverse voltage

−

continuous forward current

Ts =90 °C; see Fig.2

−

155

IFRM

repetitive peak forward current

−

500

IFSM

non-repetitive peak forward current

square pulse; Tj =25 °C prior to

surge; see Fig.4

t=1

µs

−

t=1ms

−

t=1s

−

0.5

Ptot

total power dissipation

Ts =90 °C

−

170

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

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