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BAS11 Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BAS11
Description  Controlled avalanche rectifiers
PDF  7 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS11 Fiches technique(HTML) 2 Page - NXP Semiconductors

  BAS11 Datasheet HTML 1Page - NXP Semiconductors BAS11 Datasheet HTML 2Page - NXP Semiconductors BAS11 Datasheet HTML 3Page - NXP Semiconductors BAS11 Datasheet HTML 4Page - NXP Semiconductors BAS11 Datasheet HTML 5Page - NXP Semiconductors BAS11 Datasheet HTML 6Page - NXP Semiconductors BAS11 Datasheet HTML 7Page - NXP Semiconductors  
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1996 Sep 26
2
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BAS11; BAS12
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Available in ammo-pack.
DESCRIPTION
Rectifier diodes in cavity free
cylindrical SOD91 glass packages,
incorporating Implotec
(1)
technology.
(1) Implotec is a trademark of Philips.
These packages are hermetically
sealed and fatigue free as coefficients
of expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD91) and symbol.
MAM196
k
a
Marking code BAS11: S11.
Marking code BAS12: S12.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BAS11
300
V
BAS12
400
V
VRWM
working reverse voltage
BAS11
300
V
BAS12
400
V
VR
continuous reverse voltage
BAS11
300
V
BAS12
400
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp =75 °C; lead length = 10 mm;
see Figs 2 and 4
350
mA
averaged over any 20 ms period;
Tamb =30 °C; PCB mounting
(see Fig.8); see Figs 3 and 4
300
mA
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj =Tj max prior to surge;
VR =VRRMmax
4A
PRRM
repetitive peak reverse power
dissipation
t=10
µs square wave; f = 50 Hz;
Tamb =25 °C
75
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C



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