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BAS11 Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BAS11 Fiches technique(HTML) 2 Page - NXP Semiconductors |
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2 / 7 page ![]() 1996 Sep 26 2 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack. DESCRIPTION Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating Implotec ™(1) technology. (1) Implotec is a trademark of Philips. These packages are hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD91) and symbol. MAM196 k a Marking code BAS11: S11. Marking code BAS12: S12. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BAS11 − 300 V BAS12 − 400 V VRWM working reverse voltage BAS11 − 300 V BAS12 − 400 V VR continuous reverse voltage BAS11 − 300 V BAS12 − 400 V IF(AV) average forward current averaged over any 20 ms period; Ttp =75 °C; lead length = 10 mm; see Figs 2 and 4 − 350 mA averaged over any 20 ms period; Tamb =30 °C; PCB mounting (see Fig.8); see Figs 3 and 4 − 300 mA IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax − 4A PRRM repetitive peak reverse power dissipation t=10 µs square wave; f = 50 Hz; Tamb =25 °C − 75 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C |
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