BA592 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1998 May 07

Philips Semiconductors

Preliminary speciﬁcation

Band-switching diode

BA592

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

IF =10mA

−−

reverse current

VR =20V

−−

diode capacitance

VR = 1 V; f = 1 MHz; note 1

−

0.92

1.4

VR = 3 V; f = 1 MHz; note 1

0.6

0.85

1.1

diode forward resistance

IF = 3 mA; f = 100 MHz; note 1

−

0.45

0.7

Ω

IF = 10 mA; f = 100 MHz; note 1

−

0.36

0.5

Ω

1/gp

reverse resistance

VR = 1 V; f = 100 MHz; note 1

−

100

−

Ω

series inductance

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

120

K/W

GRAPHICAL DATA

Fig.2

Forward resistance as a function of

forward current; typical values.

f = 100 MHz; Tj =25 °C.

0.1

100

IF (mA)

(

Ω)

Fig.3

Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj =25 °C.

0.4

0.8

1.2

1.6

102030

VR (V)

(pF)

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