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BA481 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BA481 Fiches technique(HTML) 3 Page - NXP Semiconductors |
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3 / 5 page ![]() 1996 Mar 19 3 Philips Semiconductors Product specification UHF mixer diode BA481 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise Fif = 1.5 dB; f = 35 MHz. THERMAL CHARACTERISTICS Note 1. Refer to SOD68 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.2 IF =1mA 450 mV IF =10mA 600 mV IR reverse current VR = 4 V; see Fig.3 10 µA VR =4V; Tamb =60 °C; see Fig.3 100 µA rs series resistance f = 1 kHz; IF =5mA 13 Ω F noise figure f = 900 MHz; note 1 8 dB Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.4 1.1 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 320 KW |
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