Nexperia

MJD31C

100 V, 3 A NPN high power bipolar transistor

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

B

base

2

C

collector

3

E

emitter

mb

C

mounting base; connected

to collector

3

2

mb

1

DPAK (SOT428C)

aaa-029889

C; mb

E

B

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

MJD31C

DPAK

Plastic single-ended surface-mounted package (DPAK); 3 leads

(one lead cropped)

SOT428C

7. Marking

Table 4. Marking codes

Type number

Marking code

MJD31C

MJD31C

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC601134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCEO

collector-emitter voltage open base

-

100

V

VEBO

emitter-base voltage

open collector

-

6

V

IC

collector current

-

3

A

ICM

peak collector current

single pulse; tp ≤ 1 ms

-

5

A

Tmb ≤ 25 °C

[1]

-

15

W

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

-

1.6

W

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Total power dissipation junction to mounting base.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm2.

MJD31C

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© Nexperia B.V. 2020. All rights reserved

Product data sheet

16 September 2020

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