2SD560 datasheet(4/8 Pages) RENESAS

No de pièce	2SD560

Description	SILICON POWER TRANSISTOR

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Fabricant	RENESAS [Renesas Technology Corp]

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Data Sheet D14863EJ3V0DS

2SD560

ELECTRICAL CHARACTERISTICS (TA = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 100 V, IE = 0 A

1.0

µA

hFE1

VCE = 2.0 V, IC = 3.0 A

Note

2,000

6,000

15,000

DC current gain

hFE2

VCE = 2.0 V, IC = 5.0 A

Note

500

Collector saturation voltage

VCE(sat)

IC = 3.0 A, IB = 3.0 mA

Note

0.9

1.5

Base saturation voltage

VBE(sat)

IC = 3.0 A, IB = 3.0 mA

Note

1.6

2.0

Turn-on time

ton

1.0

µs

Storage time

tstg

3.5

µs

Fall time

IC = 3.0 A, RL = 16.7

Ω,

IB1 =

−IB2 = 3.0 mA, VCC ≅ 50 V

Refer to the test circuit.

1.2

µs

Note Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

hFE1

2,000 to 5,000

3,000 to 7,000

5,000 to 15,000

SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT

Base current

waveform

Collector current

waveform

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