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2SC5753 Fiches technique(PDF) 5 Page - Renesas Technology Corp

No de pièce 2SC5753
Description  NPN SILICON RF TRANSISTOR
PDF  22 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5753 Fiches technique(HTML) 5 Page - Renesas Technology Corp

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Data Sheet P15659EJ1V0DS
3
2SC5753
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°°°°C)
f = 1 MHz
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
01
4
5
3
26
1 000
100
10
1
0.1
10
100
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
VCE = 3 V
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.6
0.5
0.8
0.9
1.0
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
50
30
40
90
80
70
60
10
20
02
6
48
IB = 100 A
µ
300 A
µ
400 A
µ
500 A
µ
600 A
µ
700 A
µ
200 A
µ
300
250
200
205
150
100
50
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )



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