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2SC5751 Fiches technique(PDF) 5 Page - Renesas Technology Corp

No de pièce 2SC5751
Description  NPN SILICON RF TRANSISTOR
PDF  18 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5751 Fiches technique(HTML) 5 Page - Renesas Technology Corp

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Data Sheet P15657EJ1V0DS
3
2SC5751
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°°°°C)
300
250
200
205
150
100
50
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
f = 1 MHz
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
0.4
0.3
0.2
0.1
01
4
5
3
26
1 000
100
10
1
0.1
10
100
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
VCE = 3 V
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.6
0.5
0.8
0.9
1.0
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
30
20
50
40
10
03
12
5
6
7
48
IB : 50 A step
µ
IB = 50 A
µ
100 A
µ
200 A
µ
300 A
µ
400 A
µ
500 A
µ



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