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STP80NF10FP Fiches technique(PDF) 3 Page - STMicroelectronics |
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STP80NF10FP Fiches technique(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STP80NF10FP Electrical ratings 3/12 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate- source voltage ±20 V ID (1) 1. Limited by Package Drain current (continuous) at TC = 25°C 38 A ID (1) Drain current (continuous) at TC = 100°C 27 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 152 A PTOT Total dissipation at TC = 25°C 45 W Derating factor 0.3 W/°C dv/dt (3) 3. ISD <80A, di/dt < 300A/µs, VDD=80% V(BR)DSS Peak diode recovery voltage slope 9 V/ns EAS (4) 4. Starting Tj = 25°C, ID = 80A, VDD = 50V Single pulse avalanche energy 350 mJ VISO Insulation withstand voltage (DC) 2500 V Tstg Tj Storage temperature Operating junction temperature -55 to 175 °C Table 2. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case Max 3.33 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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