IL2

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Vishay Semiconductors

Rev. 1.7, 15-Apr-2021

2

Document Number: 83612

For technical questions, contact: optocoupler.answers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability

(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through

hole devices (DIP)

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements

OUTPUT

Collector emitter breakdown voltage

BVCEO

70

V

Emitter base breakdown voltage

BVEBO

7V

Collector base breakdown voltage

BVCBO

70

V

Collector current

IC

50

mA

t < 1.0 ms

IC

400

mA

Power dissipation

Pdiss

200

mW

Derate linearly from 25 °C

2.6

mW/°C

COUPLER

Package power dissipation

Ptot

250

mW

Derate linearly from 25 °C

3.3

mW/°C

Storage temperature

Tstg

-40 to +150

°C

Operating temperature

Tamb

-40 to +100

°C

Junction temperature

Tj

125

°C

Soldering temperature (1)

2.0 mm from case bottom

Tsld

260

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 60 mA

VF

-

1.25

1.65

V

Breakdown voltage

IR = 10 μA

VBR

630

-

V

Reverse current

VR = 6.0 V

IR

-0.01

10

μA

Capacitance

VR = 0 V, f = 1.0 MHz

CO

-40

-

pF

Thermal resistance junction to lead

Rthjl

-

750

-

K/W

OUTPUT

Collector emitter capacitance

VCE = 5.0 V, f = 1.0 MHz

CCE

-6.8

-

pF

Collector base capacitance

VCB = 5.0 V, f = 1.0 MHz

CCB

-8.5

-

pF

Emitter base capacitance

VEB = 5.0 V, f = 1.0 MHz

CEB

-11

-

pF

Collector emitter leakage voltage

VCE = 10 V

ICEO

-

5

50

nA

Collector emitter saturation voltage

ICE = 1.0 mA, IB = 20 μA

VCEsat

-0.25-

V

Base emitter voltage

VCE = 10 V, IB = 20 μA

VBE

-

0.65

-

V

DC forward current gain

VCE = 10 V, IB = 20 μA

hFE

200

650

1800

DC forward current gain saturated

VCE = 0.4 V, IB = 20 μA

hFEsat

120

400

600

Thermal resistance junction to lead

Rthjl

-

500

-

K/W

COUPLER

Capacitance (input to output)

VI-O = 0 V, f = 1.0 MHz

CIO

-0.6

-

pF

Insulation resistance

VI-O = 500 V

RS

-1014

-

Ω

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT