FAM65V05DF1 datasheet(11/16 Pages) ONSEMI

No de pièce	FAM65V05DF1

Description	Auto SPM Series Automotive 3-Phase IGBT Smart Power Module

PDF	16 Pages

Scroll/Zoom	100%

Fabricant	ONSEMI [ON Semiconductor]

Site Internet	http://www.onsemi.com

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11 / 16 page

FAM65V05DF1

www.onsemi.com

TYPICAL INVERTER CHARACTERISTICS (continued)

Figure 12. Reverse Recovery Energy DIODE Inverter

(Typical) versus Forward Current

VCC = VBS = 15 V

VIN = 0 V ↔ 5 V, Ls = 55 nH, Inductive Load, TJ = 125°C

IF, Forward Current (A)

Figure 13. Reverse Bias Safe Operating Area IGBT

(RBSOA) Inverter

VCC = VBS = 15 V, Tj = 150°C

Time Duration (s)

Figure 14. Transient Thermal Impedance IGBT

Inverter

Figure 15. Transient Thermal Impedance DIODE

Inverter

0.00

0.10

0.20

0.30

0.40

0.50

20406080

100

ERR, VPN = 450 V, HS

ERR, VPN = 450 V, LS

ERR, VPN = 300 V, HS

ERR, VPN = 300 V, LS

100

125

150

175

100

200

300

400

500

600

700

IC Module

IC Chip

VCE (V)

0.01

0.10

1.00

0.0001

0.001

0.01

0.1

ZthJC IGBT

ri [°C/W]: 0.0264

0.0615

0.132

0.05

t [s]:

6.04e−6

5.8e−5

1.25e−3 5.14e−3

0.01

0.10

1.00

0.0001

0.001

0.01

0.1

ZthJC DIODE

Time Duration (s)

ri [°C/W]: 0.0070

0.1389

0.2439

0.1411

t [s]:

1.05e−5

1.31e−4 2.09e−3 5.86e−

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