HMS1M32M8V datasheet(4/9 Pages) HANBIT

No de pièce	HMS1M32M8V

Description	SRAM MODULE 4Mbyte(1M x 32-Bit) 3.3V

PDF	9 Pages

Scroll/Zoom	100%

Fabricant	HANBIT [Hanbit Electronics Co.,Ltd]

Site Internet	http://www.hbe.co.kr

Logo

4 / 9 page

HANBit

HMS1M32M8V

HANBit Electronics Co.,Ltd.

DC AND OPERATING CHARACTERISTICS (2)

MAX

DESCRIPTION

TEST CONDITIONS

SYMBOL

-12

-15

-20

UNIT

Power Supply

Current:Operating

Min. Cycle, 100% Duty

/CE=VIL, VIN=VIH or VIL,

IOUT=0mA

lCC

150

145

140

Min. Cycle, /CE=VIH

lSB

Power Supply

Current:Standby

f=0MHZ, /CE

≥V

CC-0.2V,

VIN

≥ V

CC-0.2V or VIN

≤0.2V

lSB1

CAPACITANCE

DESCRIPTION

TEST CONDITIONS

SYMBOL

MAX

UNIT

Input /Output Capacitance

VI/O=0V

CI/O

8pF

Input Capacitance

VIN=0V

CIN

7pF

* NOTE : Capacitance is sampled and not 100% tested

AC CHARACTERISTICS (0oC

≤ TA ≤ 70 oC ; Vcc = 3.3V ± 0.3V, unless otherwise specified)

TEST CONDITIONS

PARAMETER

VALUE

Input Pulse Level

0 to 3V

Input Rise and Fall Time

3ns

Input and Output Timing Reference Levels

1.5V

Output Load

See below

+3.3V

319

Ω

353

Ω

5pF*

DOUT

Output Load (B)

for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ

VL=1.5V

Ω

30pF

DOUT

Z0=50

Ω

Output Load (A)

HMS1M32M8V Fiches technique(PDF) 4 Page - Hanbit Electronics Co.,Ltd

HMS1M32M8V Fiches technique(HTML) 4 Page - Hanbit Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7 8 9

Fiches technique Télécharger

Lien URL