CMBT6517 datasheet(1/3 Pages) CDIL

No de pièce	CMBT6517

Description	HIGH-VOLTAGE TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Fabricant	CDIL [Continental Device India Limited]

Site Internet	http://www.cdilsemi.com

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Continental Device India Limited

Data Sheet

Page 1 of 3

HIGH–VOLTAGE TRANSISTOR

N–P–N transistor

Marking

CMBT6517 = 1Z

ABSOLUTE MAXIMUM RATINGS

Collector–base voltage (open emitter)

–VCBO

max.

350 V

Collector–emitter voltage (open base)

–VCEO

max.

350 V

Emitter–base voltage (open collector)

–VEBO

max.

5 V

Collector current (d.c.)

–I C

max.

500 mA

Total power dissipation at Tamb = 25°C

Ptot

max

225 mW

D.C. current gain

–IC = 10 mA; –VCE = 10 V

hFE

min.

30

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

–VCBO

max.

350 V

Collector–emitter voltage (open base)

–VCEO

max.

350 V

Emitter–base voltage (open collector)

–VEBO

max.

5 V

Collector current (d.c.)

–I C

max.

500 mA

Total power dissipation at Tamb = 25°C

Ptot

max

225 mW

Storage temperature

Tstg

–55 to +150 ° C

Junction temperature

Tj

max.

150 ° C

CMBT6517

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

3

2

1

SOT-23 Formed SMD Package

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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