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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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APT4020BN Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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APT4020BN Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor APT4020BN DESCRIPTION · Drain Current :ID= 26A@ TC=25℃ · Drain Source Voltage : VDSS=400V(Min) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ± 30 V ID Drain Current-continuous@ TC=25℃ 26 A IDM Drain Current-Single Pluse 104 A Ptot Total Dissipation@TC=25℃ 310 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.4 ℃ /W |
Numéro de pièce similaire - APT4020BN |
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Description similaire - APT4020BN |
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