CP310 datasheet(1/2 Pages) CENTRAL

No de pièce	CP310

Description	Small Signal Transistor NPN - High Voltage Transistor Chip

PDF	2 Pages

Scroll/Zoom	100%

Fabricant	CENTRAL [Central Semiconductor Corp]

Site Internet	http://www.centralsemi.com

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1 / 2 page

Central

Semiconductor Corp.

TM

PROCESS

CP310

Small Signal Transistor

NPN - High Voltage Transistor Chip

PRINCIPAL DEVICE TYPES

2N3439

2N3440

CMPTA42

CMPTA44

CMPT6517

CXTA44

CZTA42

CZTA44

MPSA42

MPSA44

Process

EPITAXIAL PLANAR

Die Size

26 x 26 MILS

Die Thickness

9.0 MILS

Base Bonding Pad Area

6.1 x 4.9 MILS

Emitter Bonding Pad Area

5.2 x 5.2 MILS

Top Side Metalization

Al - 30,000Å

Back Side Metalization

Au - 18,000Å

PROCESS DETAILS

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

BACKSIDE COLLECTOR

GEOMETRY

R2 (1-August 2002)

GROSS DIE PER 4 INCH WAFER

16,880

Central

Semiconductor Corp.

TM

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CP310 Fiches technique(PDF) 1 Page - Central Semiconductor Corp

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