APM4350KP datasheet(2/11 Pages) ANPEC

2 / 11 page

Rev. A.1 - Jun., 2006

www.anpec.com.tw

APM4350KP

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

Common Ratings (TA=25°C Unless Otherwise Noted)

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

±20

Maximum Junction Temperature

150

°C

TSTG

Storage Temperature Range

-55 to 150

°C

Diode Continuous Forward Current

TC=25

°C

TC=25

°C

140

IDP

300µs Pulse Drain Current Tested

TC=100

°C

Mounted on Large Heat Sink

TC=25

°C

Continuous Drain Current

TC=100

°C

TC=25

°C

Maximum Power Dissipation

TC=100

°C

RθJC

Thermal Resistance-Junction to Case

2.5

°C/W

Mounted on PCB of 1in

2 pad area

TA=25

°C

13.5

Continuous Drain Current

TA=100

°C

8.5

TA=25

°C

2.5

Maximum Power Dissipation

TA=100

°C

RθJA

Thermal Resistance-Junction to Ambient

°C/W

Mounted on PCB of Minimum Footprint

TA=25

°C

Continuous Drain Current

TA=100

°°C

TA=25

°C

1.5

Maximum Power Dissipation

TA=100

°C

0.5

RθJA

Thermal Resistance-Junction to Ambient

°C/W

APM4350KP Fiches technique(PDF) 2 Page - Anpec Electronics Coropration

APM4350KP Fiches technique(HTML) 2 Page - Anpec Electronics Coropration

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Fiches technique Télécharger

Lien URL