APM2054NV datasheet(2/11 Pages) ANPEC

2 / 11 page

Rev. B.2 - Apr., 2005

www.anpec.com.tw

APM2054NV

Symbol

Parameter

Rating

Unit

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

±16

ID*

Continuous Drain Current

IDM*

Pulsed Drain Current

VGS=10V

IS*

Diode Continuous Forward Current

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

1.47

PD*

Power Dissipation for Single Operation

TA=100°C

0.58

RθJA*

Thermal Resistance-Junction to Ambient

°C/W

Note:

*Surface Mounted on 1in

2 pad area, t

≤ 10sec.

APM2054NV

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250µA

VDS=16V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250µA

0.6

0.9

1.5

IGSS

Gate Leakage Current

VGS=±16V, VDS=0V

±100

VGS=10V, IDS=5A

VGS=4.5V, IDS=3.5A

RDS(ON)

Drain-Source On-state Resistance

VGS=2.5V, IDS=2.5A

110

130

Ω

VSD

Diode Forward Voltage

ISD=3A, VGS=0V

0.85

1.3

Gate Charge Characteristics

Total Gate Charge

Qgs

Gate-Source Charge

3.8

Qgd

Gate-Drain Charge

VDS=10V, VGS=4.5V,

IDS=6A

5.2

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

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