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MS2554 Fiches technique(PDF) 1 Page - Advanced Power Technology |
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MS2554 Fiches technique(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() MSCXXXX.PDF 01-19-99 MS2554 DESCRIPTION: The MS2554 is a NPN bipolar transistor specifically designed for high peak pulse power applications such as DME/TACAN. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Internal impedance matching provides consistent broadband performance. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °C) Symbol Parameter Value Unit PDISS Power Dissipation 600 W IC Device Current 17.8 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature 200 °C TSTG Storage Temperature -65 to +200 °C Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.20 °C/W Features • 1025 – 1150 MHz • 50 VOLTS • INPUT/OUTPUT MATCHING • P OUT = 250 WATTS • G P = 6.2 dB MINIMUM • COMMON BASE CONFIGURATION RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 |
Numéro de pièce similaire - MS2554 |
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Description similaire - MS2554 |
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