MS2267 datasheet(1/6 Pages) ADPOW

No de pièce	MS2267

Description	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

PDF	6 Pages

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Fabricant	ADPOW [Advanced Power Technology]

Site Internet	http://www.advpowertech.com

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MS2267

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

DESCRIPTION:

The MS2267 is a high power Class C NPN transistor

specifically designed for TACAN/DME applications.

This device is capable of operation under moderate pulse

width and duty cycles. Low thermal resistance and

computerized automatic wire bonding techniques ensure

high reliability and product consistency.

The MS2267 utilizes an emitter ballasted die geometry

capable of operating into a 5:1 VSWR @ 1.0 dB overdrive.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation* (TC

≤≤ 90°°C)

575

W

IC

Device Current*

20

A

Vcc

Collector-Supply Voltage*

50

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°°C

TSTG

Storage Temperature

-65 to +200

°°C

Thermal Data

RTH(J-C)

Junction-case Thermal Resistance

∗∗ (1)

0.28

°°C/W

* Applies only to rated RF amplifier operation

(1) Infra-red scan of hot spot junction temperature at rated RF operating conditions

Features

• 960 – 1215MHz

• 50 VOLTS

• 5:1 VSWR CAPABILITY @ RATED CONDITIONS

• INPUT/OUTPUT MATCHING

• P

OUT = 250 WATTS

• G

P = 8.0 dB MINIMUM

•• COMMON BASE CONFIGURATION

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

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