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APT1003RBFLL Fiches technique(PDF) 4 Page - Advanced Power Technology

No de pièce APT1003RBFLL
Description  POWER MOS 7 FREDFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  ADPOW [Advanced Power Technology]
Site Internet  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT1003RBFLL Fiches technique(HTML) 4 Page - Advanced Power Technology

  APT1003RBFLL Datasheet HTML 1Page - Advanced Power Technology APT1003RBFLL Datasheet HTML 2Page - Advanced Power Technology APT1003RBFLL Datasheet HTML 3Page - Advanced Power Technology APT1003RBFLL Datasheet HTML 4Page - Advanced Power Technology APT1003RBFLL Datasheet HTML 5Page - Advanced Power Technology  
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APT1003RBFLL_SFLL
TJ=+150°C
TJ =+25°C
Crss
Ciss
Coss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
10
100
1000
0
10
20
30
40
50
0
5
10
15
20
25
30
35 40
45 50
0.3
0.5
0.7
0.9
1.1
1.3
1.5
16
10
5
1
.5
.1
16
12
8
4
0
TC=+25°C
TJ =+150°C
SINGLE PULSE
10mS
1mS
100µS
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 667V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
Eon
Eoff
tr
tf
0
12345678
0
1
23
45678
0
1234567
8
0
5
10
15
20
25
30
35 40
45
50
V
DD
= 667V
I
D
= 4A
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
VDS=500V
VDS=200V
VDS=800V
I
D
= 4A
td(on)
td(off)
Eon
Eoff
25
20
15
10
5
0
90
80
70
60
50
40
30
20
10
0
V
DD
= 667V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
V
DD
= 667V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
E
ON includes
diode reverse recovery.
4,000
1,000
100
10
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
70
60
50
40
30
20
10
0
140
120
100
80
60
40
20
0



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