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STS5DP3LLH6 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STS5DP3LLH6 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() January 2018 DocID025864 Rev 3 1/14 This is information on a product in full production. www.st.com STS5DP3LLH6 Dual P-channel - 30 V, 48 mΩ typ., -5 A, STripFET™ H6 Power MOSFET in an SO-8 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STS10P3LLH6 -30 V 56 mΩ -5 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STS5DP3LLH6 5KK3L SO-8 Tape and reel |
Numéro de pièce similaire - STS5DP3LLH6 |
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Description similaire - STS5DP3LLH6 |
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