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STM32G081CB Fiches technique(PDF) 75 Page - STMicroelectronics |
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STM32G081CB Fiches technique(HTML) 75 Page - STMicroelectronics |
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75 / 136 page ![]() DS12231 Rev 4 75/136 STM32G081xB Electrical characteristics 108 Figure 20. HSI16 frequency vs. temperature Low-speed internal (LSI) RC oscillator tstab(HSI16)(2) HSI16 oscillator stabilization time - - 3 5 μs IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA 1. Based on characterization results, not tested in production. 2. Guaranteed by design. Table 41. HSI16 oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit MSv39299V1 15.6 15.7 15.8 15.9 16 16.1 16.2 16.3 16.4 MHz min mean max +1% -1% +2% -2% +1.5% -1.5% -40 -20 0 20 40 60 80 100 120 °C Table 42. LSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSI LSI frequency VDD = 3.0 V, TA = 30 °C 31.04 - 32.96 kHz VDD = 1.62 V to 3.6 V, TA = -40 to 125 °C 29.5 - 34 tSU(LSI)(2) LSI oscillator start-up time - - 80 130 μs tSTAB(LSI)(2) LSI oscillator stabilization time 5% of final frequency - 125 180 μs IDD(LSI)(2) LSI oscillator power consumption - - 110 180 nA 1. Based on characterization results, not tested in production. 2. Guaranteed by design. |
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