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SPC574S60 Fiches technique(PDF) 45 Page - STMicroelectronics

No de pièce SPC574S60
Description  32-bit Power Architecture microcontroller for automotive ASILD applications
PDF  77 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SPC574S60 Fiches technique(HTML) 45 Page - STMicroelectronics

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SPC574Sx
Electrical characteristics
76
Table 28. Flash memory program and erase specifications
Symbol
Characteristics(1)(2)
Value
Unit
Typ(3) C
Initial max
Typical
end of
life(4)
Lifetime
max(5)
C
25 °C
(6)
All
temp
(7)
C
< 1 K
cycles
< 100 K
cycles
tdwprogram
Double Word (64 bits)
program time [Packaged part]
43
C
130
—
—
140
500
C
µs
tpprogram
Page (256 bits) program time
72
C
240
—
—
240
1000
C
µs
tpprogrameep
Page (256 bits) program time
Data Flash - EEPROM
(partition 1) [Packaged part]
83
C
264
—
—
276
1000
C
µs
tqprogram
Quad Page (1024 bits)
program time
263
C
1040
1200
P
850
2000
C
µs
tqprogrameep
Quad Page (1024 bits)
program time Data Flash -
EEPROM (partition 1)
[Packaged part]
285
C
1140
1320
P
978
2000
C
µs
t16kpperase
16 KB block pre-program and
erase time
150
C
1000
1000
P
190
2000
—
C ms
t32kpperase
32 KB block pre-program and
erase time
200
C
1000
1000
P
230
2000
—
C ms
t64kpperase
64 KB block pre-program and
erase time
300
C
1000
1000
P
420
2000
—
C ms
t256kpperase
256 KB block pre-program
and erase time
900
C
2000
3000
P
1600
5000
—
C ms
t16kprogram
16 KB block program time
34
C
45
50
P
40
1000
—
C ms
t32kprogram
32 KB block program time
67
C
90
100
P
75
2000
—
C ms
t64kprogram
64 KB block program time
135
C
175
200
P
150
3000
—
C ms
t256kprogram 256 KB block program time
540
C
700
850
P
590
4000
—
C ms
t16kprogrameep
Program 16 KB Data Flash -
EEPROM (partition 1)
[Packaged part]
39
C
52
58
P
64
1000
C ms
t16keraseeep
Erase 16 KB Data Flash -
EEPROM (partition 1)
[Packaged part]
160
C
1000
1000
P
400
5000
C ms
ttr
Program rate(8)
2.2
C
2.8
3.40
C
2.4
—
C
s/M
B
tpr
Erase rate(8)
3.5
C
8.0
12.0
C
6.4
—
C
s/M
B
tffprogram
Full flash programming time(9)
3.3
C
4.2
5.2
P
3.0
16
—
C
s
tfferase
Full flash erasing time(9)
6.0
C
15.0
19.0
P
6.8
20
—
C
s



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