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2ST2480 Fiches technique(PDF) 1 Page - STMicroelectronics |
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2ST2480 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() Preliminary data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. October 2009 Doc ID 16380 Rev 1 1/7 7 2ST1480 2ST2480 Complementary power transistors Features ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Fully insulated package Applications ■ Voltage regulation ■ Computer and peripheral equipment ■ Audio amplifier ■ Relay driver Description The devices are manufactured using new “PB- HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Figure 1. Internal schematic diagrams 3 2 1 SOT-32FP Table 1. Device summary Order codes Marking Package Packaging 2ST1480 2ST1480 SOT-32FP Bag 2ST2480 2ST2480 www.st.com Obsolete Product(s) - Obsolete Product(s) |
Numéro de pièce similaire - 2ST2480 |
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Description similaire - 2ST2480 |
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