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DMHC6070LSD Fiches technique(PDF) 5 Page - Diodes Incorporated

No de pièce DMHC6070LSD
Description  60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMHC6070LSD Fiches technique(HTML) 5 Page - Diodes Incorporated

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DMHC6070LSD
Document number: DS38714 Rev. 1 - 2
5 of 10
www.diodes.com
April 2016
© Diodes Incorporated
DMHC6070LSD
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
-50
-25
0
25
50
75
100
125
150
V
= 4.5V
GS
I = 2A
D
V
= 10V
GS
I = 5A
D
T , JUNCTION TEMPERATURE ( C)
J
Figure 7 On-Resistance Variation with Temperature
0
0.5
1
1.5
2
2.5
3
-50
-25
0
25
50
75
100
125
150
I = 1mA
D
I = 250µA
D
T , JUNCTION TEMPERATURE ( C)
J
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0
1
2
3
4
5
6
7
8
9
10
0
0.3
0.6
0.9
1.2
1.5
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
10000
0
5
10
15
20
25
30
Ciss
Coss
Crss
f=1MHz
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
0
2
4
6
8
10
0
2
4
6
8
10
12
V
= 30V
DS
I = 3A
D
Q , TOTAL GATE CHARGE (nC)
g
Figure 11 Gate Charge
0.01
0.1
1
10
100
0.1
1
10
100
RDS(on)
Limited
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
T
= 150°C
J (m ax )
T = 25°C
A
V
= 10V
GS
Single Pulse
DUT on 1 * MRP Board
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 12 SOA, Safe Operation Area



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