2N5943 datasheet(1/1 Pages) ASI

No de pièce	2N5943

Description	NPN SILICON HIGH FREQUENCY TRANSISTOR

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Fabricant	ASI [Advanced Semiconductor]

Site Internet	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

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Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 OC

NONE

SYMBOL

TEST CONDITIONS

MINIMUM

TYPICAL

MAXIMUM

UNITS

BVCEO

IC = 5.0 mA

30

V

BVCBO

IC = 100

µA

40

V

BVEBO

IE = 100

µA

3.5

V

ICEO

VCE = 20 V

50

µµµµA

ICBO

VCB = 15 V

10

µµµµA

hFE

VCE = 15 V

IC = 50 mA

25

300

---

VCE(SAT)

IC = 100 mA

IB = 10 mA

0.2

V

VBE(SAT)

IC = 100 mA

IB = 10 mA

1.0

V

ft

VCE = 15 V

IC = 25 mA

f = 200 MHz

IC = 50 mA

f = 200 MHz

IC = 100 mA

f = 200 MHz

1000

120

1000

2400

MHz

Ccb

VCB = 30 V

f = 100 KHz

1.0

3.5

pF

Ceb

VCB = 0.5 V

f = 100 KHz

15

pF

hfe

VCE = 15 V

IC = 50 mA

f = 1.0 KHz

25

350

---

rb'Cc

VCE = 15 V

IC = 50 mA

f = 31.8 MHz

2.0

20

pS

NF

VCE = 15 V

IC = 50 mA

f = 200 MHz

8.0

dB

Gpe

VCC = 15 V

IC = 50 mA

f = 200 MHz

7.0

dB

IM

VCC = 15 V

IC = 50 mA

Vout = +50 dbmV

-50

dB

XM

VCC = 15 V

IC = 50 mA

Vout = +50 dbmV

-45

dB

NPN SILICON HIGH FREQUENCY TRANSISTOR

2N5943

DESCRIPTION:

The

2N5943 is a High Frequency

Transistor for General Purpose

Amplifier Applications.

MAXIMUM RATINGS

IC

400 mA

VCE

30 V

PDISS

1.0 W @ TA = 25

OC

3.5 W @ TC = 25

OC

TJ

-65

OC to +200 OC

TSTG

-65

OC to +200 OC

θθθθ

JC

125

OC/W

PACKAGE STYLE TO-39

1 = EMITTER

2 = BASE

3 = COLLECTOR

Numéro de pièce similaire - 2N5943

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