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STF6N60DM2 Fiches technique(PDF) 6 Page - STMicroelectronics |
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STF6N60DM2 Fiches technique(HTML) 6 Page - STMicroelectronics |
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6 / 12 page ![]() Figure 7. Capacitance variations GIPD200620171408CVR 10 3 10 2 10 1 10 0 10 -1 10 0 10 1 10 2 C (pF) VDS (V) CISS COSS CRSS Figure 8. Output capacitance stored energy GIPD270620171145EOS 2 1.6 1.2 0.8 0.4 0 0 100 200 300 400 500 600 EOSS (µJ) VDS (V) Figure 9. Normalized gate threshold voltage vs temperature GIPD200620171427VTH 1.1 1 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) Tj (°C) ID = 250 µA Figure 10. Normalized on-resistance vs temperature GIPD200620171437RON 2.5 2 1.5 1 0.5 0 -75 -25 25 75 125 RDS(on) (norm.) Tj (°C) VGS = 10 V Figure 11. Source-drain diode forward characteristics GIPD200620171441SDF 1.1 1 0.9 0.8 0.7 0.6 0.5 0 1 2 3 4 5 VSD (V) ISD (A) Tj = -50 °C Tj = 25 °C Tj = 150 °C Figure 12. Normalized V(BR)DSS vs temperature GIPD200620171444VTH 1.1 1.05 1 0.95 0.9 0.85 -75 -25 25 75 125 VGS(th) (norm.) Tj (°C) ID = 1 mA STF6N60DM2 Electrical characteristics (curves) DS12220 - Rev 3 page 6/12 |
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