STP50N65DM6 datasheet(4/11 Pages) STMICROELECTRONICS

No de pièce	STP50N65DM6

Description	N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package

PDF	11 Pages

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM (1)

Source-drain current (pulsed)

120

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 33 A

1.6

trr

Reverse recovery time

ISD = 33 A, di/dt = 100 A/µs,VDD = 60 V

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

130

Qrr

Reverse recovery charge

0.65

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 33 A, di/dt = 100 A/µs VDD = 60 V,

Tj = 150 °C (see Figure 15. Test circuit

for inductive load switching and diode

recovery times)

226

Qrr

Reverse recovery charge

2.32

µC

IRRM

Reverse recovery current

20.6

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

STP50N65DM6

Electrical characteristics

DS12360 - Rev 4

page 4/11

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