STPSC2H065 datasheet(4/10 Pages) STMICROELECTRONICS

No de pièce	STPSC2H065

Description	650 V, 2 A high surge silicon carbide power Schottky diode

PDF	10 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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4 / 10 page

1.1

Characteristics (curves)

Figure 1. Forward voltage drop versus forward current

(typical values, low level)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

IF(

VF (V)

Figure 2. Forward voltage drop versus forward current

(typical values, high level)

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

IF(

VF (V)

Figure 3. Reverse leakage current versus reverse voltage

applied (typical values)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

100

150

200

250

300

350

400

450

500

550

600

650

IR(µA)

Tj=25 °C

Tj=150 °C

Tj=175 °C

VR(V)

Figure 4. Peak forward current versus case temperature

100

125

150

175

I M (A)

δ =0.1

δ =0.3

δ =0.5

δ =0.7

δ =1

TC(°C)

δ=tp/T

STPSC2H065

Characteristics (curves)

DS12989 - Rev 1

page 4/10

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