B2

1

2

3

Pin connection

Pin

Connection

1

Gate

2

Source (bottom side)

3

Drain

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF2L36075CF2

3500 MHz

28 V

75 W

12.5 dB

45%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Internal input matching for ease of use

•

Large positive and negative gate-source voltage range for improved class C

operation

•

Excellent thermal stability, low HCI drift

•

In compliance with the european directive 2002/95/EC

Applications

•

Telecom

•

S-Band radar

Description

The RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for

multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in

the frequency range from 3.1 to 3.6 GHz. It can be used in class AB, B or C for all

typical cellular base station modulation formats.

Product status link

RF2L36075CF2

Product summary

Order code

RF2L36075CF2

Marking

2L36075

Package

B2

Packing

Tape and reel 13"

Base / Bulk qty

120/120

75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor

RF2L36075CF2

Datasheet

DS13249 - Rev 2 - April 2021

For further information contact your local STMicroelectronics sales office.

www.st.com