STPSC8065 datasheet(1/9 Pages) STMICROELECTRONICS

No de pièce	STPSC8065

Description	650 V power Schottky silicon carbide diode

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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This is information on a product in full production.

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STPSC8065

650 V power Schottky silicon carbide diode

Datasheet - production data

Features



No or negligible reverse recovery



Switching behavior independent of

temperature



Dedicated to PFC applications



High forward surge capability



Operating Tj from -40 °C to 175 °C



ECOPACK®2 compliant component

Description

The SiC diode is an ultra high performance

power Schottky diode. It is manufactured using a

silicon carbide substrate. The wide band gap

material allows the design of a Schottky diode

structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost performance in hard

switching conditions. Its high forward surge

capability ensures good robustness during

transient phases.

Table 1: Device summary

Symbol

Value

IF(AV)

8 A

VRRM

650 V

Tj (max.)

175 °C

VF (typ.)

1.30 V

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