STGAP2DM datasheet(4/22 Pages) STMICROELECTRONICS

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Electrical data

3.1

Absolute maximum ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Test condition

Min.

Max.

Unit

VDD

Logic supply voltage vs. GND

-0.3

6.5

VLOGIC

Logic pins voltage vs. GND

-0.3

6.5

iLOCK

Interlocking enable vs. GND

-0.3

VDD + 0.3

VH_x

Positive supply voltage (VH_x vs. GNDISO_x)

-0.3

VOUT

Voltage on gate driver outputs (GOUT_x vs. GNDISO_x)

-0.3

VH_x + 0.3

VISO-OP

Input to output isolation voltage (GND vs. GNDISO_x)

DC or peak

-1700

+1700

Junction temperature

-40

150

°C

Storage temperature

-50

150

°C

PDin

Power Dissipation input chip

TA = 25 °C

PDout

Power Dissipation output chip

TA = 25 °C

1.16

ESD

HBM- (human body model)

3.2

Thermal data

Table 3. Thermal data

Symbol

Parameter

Package

Value

Unit

Rth(JA)

Thermal resistance junction to ambient

SO-16

°C/W

3.3

Recommended operating conditions

Table 4. Recommended operating conditions

Symbol

Parameter

Test conditions

Min.

Max.

Unit

VDD

Logic supply voltage vs. GND

3.1

5.5

VLOGIC

Logic pins voltage vs. GND

5.5

iLOCK

Interlocking enable vs. GND

VDD

VH_x

Positive supply voltage (VH_x vs. GNDISO-x)

GNDISOA-B (1)

Floating grounds differential voltage

(GNDISO_A - GNDISO_B)

DC or peak

-1500

+1500

FSW

Maximum switching frequency(2)

MHz

tOUT

Pulse width

100

Operating Junction Temperature

-40

125

°C

1. Characterization data, 1200 V max. tested in production.

2. Actual limit depends on power dissipation and TJ

STGAP2D

Electrical data

DS12746 - Rev 3

page 4/22

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