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SD103C Fiches technique(PDF) 1 Page - SAMYANG ELECTRONICS CO.,LTD. |
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SD103C Fiches technique(HTML) 1 Page - SAMYANG ELECTRONICS CO.,LTD. |
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1 / 2 page ![]() FEATURES For general purpose applications MECHANICAL DATA Case:JEDEC DO--35,glass case Weight: Approx. 0.13 gram (Ratings at 25 ambient temperature unless otherw ise specified) Min. UNITS V μ A V pF ns K/W Storage temperature range TSTG Reverse breakdow n voltage @ IR=10 A Symbols VR ELECTRICAL CHARACTERISTICS IR Thermal resistance junction to ambient air CJ 0.6 SD103A---SD103C SMALL SIGNAL SCHOTTKY DIODES VOLTAGE RANGE: 40 -- 20 V CURRENT: 400 mW DO - 35(GLASS) mW A Peak reverse voltage 4001) Symbols Polarity: Color band denotes cathode end Junction tenperature Pow er dissipation (Infinite Heat Sink) ABSOLUTE RATINGS(LIMITING VALUES) VRRM Ptot IFSM UNITS V fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for R JA Leakage current @ VR=50V Junction capacitance @ VR=0V,f=1MHz Reverse recovery time @ IF=IR=50mAto200mA,recover to0.1IR Forw ard voltage drop @ IF=20mA 0.3 1)Valid provided that leads at a distance of 4mmfromcase are kept at ambient temperature Single cycle surge 60Hz sine w ave 5 50 15 IF=200mA VF trr Max. Typ. 10 TJ 0.37 -55 ---+ 150 125 www.diode.co.kr 1. SD103A SD103B SD103C 40 30 20 SD103A SD103B SD103C 40 30 20 SD103A,VR=30V SD103B,VR=20V SD103C,VR=10V - - - - - - - - - - - - Forward continuous current I(AV) 350 m A SAMYANG ELECTRONICS SAM YANG |
Numéro de pièce similaire - SD103C |
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Description similaire - SD103C |
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