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PACRAMBUS-1/T Fiches technique(PDF) 1 Page - California Micro Devices Corp |
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PACRAMBUS-1/T Fiches technique(HTML) 1 Page - California Micro Devices Corp |
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1 / 3 page ![]() OBJECTIVE © 2000 California Micro Devices Corp. All rights reserved. 4/00 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com 1 CALIFORNIA MICRO DEVICES PACRAMBUS-1 HIGH PERFORMANCE RAMBUS TERMINATION NETWORK FOR RIMM CONNECTOR Features 2 chip solution for all Rambus load terminations, in 20-pin QSOP narrow package 14 Terminations in a single package 1% absolute tolerance 28 ohms terminations across temperature range Center ground pin placement reduces ground bounce and eases board layout Very low cross-talk Saves board space and reduces assembly cost Product Description The Direct Rambus memory interface transfers data at both edges of a 400MHz clock resulting in an 800MHz transfer rate. The Rambus channel uses a memory controller on one end of the bus, terminations at the other end, and the RIMM modules in between. The Rambus channel contains control signals and data bus lines that must be terminated in order to prevent any reflections. California Micro Devices PAC RAMBUS-1 integrates fourteen 28-ohm resistors specified at 1% absolute tolerance across the commercial temperature range. This termination network provides high performance, high reliability, and low cost through manufacturing efficiency. The termination resistor elements are fabricated using state-of-the-art thin film manufacturing. This integrated solution is silicon- based and has the same reliability characteristics as any of todays microprocessor products. The thin film resistors have very high stability over temperature, over applied voltage, and over life. In addition, the QSOP industry standard packaging is easy to handle in manufacturing and yields a high reliability similar to other semiconductor components. Applications Rambus Memory System C0470199 SCHEMATIC ( R Ω Ω Ω Ω Ω) e d o C 8 20 8 2 S N O I T A C I F I C E P S D R A D N A T S ) R ( r o t si s e Rs m h O 8 2 ) C ° 0 7 o t ° 0 ( ) R ( e c n a r e l o T e t u l o s b A% 1 ± R C Tm p p 0 5 1 ± e g n a R e r u t a r e p m e T g n it a r e p OC ° 0 7 o t C ° 0 r o t si s e R / g n it a R r e w o PW m 0 4 ) C ° 0 7 ( g n it a R r e w o P e g a k c a P x a MW 0 0 . 1 k l a T s s o r CD B T |
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