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2SAR583D3 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SAR583D3
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SAR583D3 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SAR583D3
DESCRIPTION
·
Collector-emitter breakdown voltage
: BVCEO= -50V(Min)
·
High DC Current Gain
: hFE= 180-450@ (VCE= -3V, IC= -1A)
·
Low Saturation Voltage
: VCE(sat)= -0.35V(Max)@ (IC= -3A, IB= -0.15A)
·
Complement to Type 2SCR583D3
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use as a driver in DC/DC converters and
actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Pulse
-14
A
PT
Total Power Dissipation @TC=25℃
10
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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