ISC3N80F datasheet(1/2 Pages) ISC

No de pièce	ISC3N80F

Description	isc N-Channel MOSFET Transistor

PDF	2 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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isc N-Channel MOSFET Transistor

ISC3N80F

FEATURES

·

Drain Current : ID= 3.0A@ TC=25℃

·

Drain Source Voltage

: VDSS= 800V(Min)

·

Static Drain-Source On-Resistance

: RDS(on) = 5.0Ω(Max)

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

DESCRIPTION

·

motor drive, DC-DC converter, power switch

and solenoid drive.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

800

V

VGS

Gate-Source Voltage-Continuous

±

30

V

ID

Drain Current-Continuous

3.0

A

IDM

Drain Current-Single Pluse

9.0

A

PD

Total Dissipation @TC=25℃

39

W

TJ

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature

-55~150

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

3.2

℃

/W

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