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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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S8008D Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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S8008D Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors S8008D DESCRIPTION · With TO-252 Non-isolated packaging · Glass passivated junctions and center gate fire for greater parameter uniformity and stability · Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(RMS) RMS on-state current 8 A ITSM Surge non-repetitive on-state current 50Hz 60Hz 83 100 A PG(AV) Average gate power dissipation 0.5 W Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ |
Numéro de pièce similaire - S8008D |
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Description similaire - S8008D |
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