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ISCNH397F Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce ISCNH397F
Description  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCNH397F Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCNH397F Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCNH397F Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
ISCNH397F
FEATURES
·
Drain Current –ID= 20A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 500V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max) @VGS=10V
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
High speed power switching
·
Switching regulator, DC-DC converter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±
30
V
ID
Drain Current-Continuous
20
A
IDM
Drain Current-Single Pulsed
80
A
PD
Total Dissipation @TC=25℃
45
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
2.78
℃
/W


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