QPD1015LEVB2 datasheet(1/27 Pages) QORVO

No de pièce	QPD1015LEVB2

Description	65W, 50V, DC ??3.7 GHz, GaN RF Transistor

PDF	27 Pages

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Fabricant	QORVO [Qorvo, Inc]

Site Internet	https://www.qorvo.com/

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QPD1015L

65W, 50V, DC – 3.7 GHz, GaN RF Transistor

Rev. C

- 1 of 27 -

Disclaimer: Subject to change without notice

www.qorvo.com

Product Features

• Frequency: DC to 3.7 GHz

• Output Power (P3dB)1: 70 W

• Linear Gain1: 20 dB

• Typical PAE3dB1: 74%

• Operating Voltage: 50 V

• Low thermal resistance package

• CW and Pulse capable

Note: 1 @ 2 GHz

General Description

The QPD1015L is a 65 W (P3dB) wideband unmatched

discrete GaN on SiC HEMT which operates from DC to

3.7 GHz with a 50V supply rail. The device is in an

industry standard air cavity package and is ideally suited

for military and civilian radar, land mobile and military

radio communications, avionics, and test

instrumentation. The device can support pulsed, CW, and

linear operation.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Functional Block Diagram

Applications

• Military radar

• Civilian radar

• Land mobile and military radio communications

• Test instrumenation

• Wideband or narrowband amplifiers

• Jammers

• Avionics

Ordering info

Part No.

ECCN

Description

QPD1015L

EAR99

DC – 3.7 GHz 65W RF

Transistor

QPD1015LPCB401

EAR99

0.96 – 1.215 GHz EVB

QPD1015LEVB2

EAR99

3.0 – 3.5 GHz EVB

Numéro de pièce similaire - QPD1015LEVB2

Fabricant	No de pièce	Fiches technique	Description
Qorvo, Inc	QPD1015	1Mb / 27P	65W, 50V, DC ??3.7 GHz, GaN RF Transistor 2016
	QPD1015EVB2	1Mb / 27P	65W, 50V, DC ??3.7 GHz, GaN RF Transistor 2016
	QPD1015PCB401	1Mb / 27P	65W, 50V, DC ??3.7 GHz, GaN RF Transistor 2016

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Fabricant	No de pièce	Fiches technique	Description
TriQuint Semiconductor	QPD1013	2Mb / 25P	150W, 65V, DC ??2.7 GHz, GaN RF Transistor
	QPD1018	1Mb / 17P	500W, 50V, 2.7 ??3.1 GHz, GaN RF IMFET
	QPD1019	2Mb / 19P	500W, 50V, 2.9 ??3.3 GHz, GaN RF IMFET
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Qorvo, Inc	QPD1009	1Mb / 28P	15W, 50V, DC ??4 GHz, GaN RF Transistor 2019
	QPD1008L	1Mb / 20P	125W, 50V, DC ??3.2 GHz, GaN RF Transistor October 2021
	QPD1010	2Mb / 25P	10W, 50V, DC ??4 GHz, GaN RF Transistor October 2021
	QPD1015	1Mb / 27P	65W, 50V, DC ??3.7 GHz, GaN RF Transistor 2016
	QPD1022	2Mb / 22P	10W, 32V, DC ??12 GHz, GaN RF Transistor February 2022
	QPD1013	2Mb / 25P	150W, 65V, DC – 2.7 GHz, GaN RF Transistor 2017

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QPD1015LEVB2 Fiches technique(PDF) 1 Page - Qorvo, Inc

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