SD103AWS, SD103BWS, SD103CWS

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Vishay Semiconductors

Rev. 2.2, 01-Jun-17

1

Document Number: 85682

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Small Signal Schottky Diodes

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MECHANICAL DATA

Case: SOD-323

Weight: approx. 4.3 mg

Packaging codes/options:

18/10K per 13” reel (8 mm tape), 10K/box

08/3K per 7” reel (8 mm tape), 15K/box

FEATURES

• The SD103 series is a metal-on-silicon

Schottky barrier device which is protected by

a PN junction guard ring

• The low forward voltage drop and fast

switching make it ideal for protection of MOS

devices, steering, biasing, and coupling

diodes for fast switching and low logic level

applications

• For general purpose applications

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: for definitions of compliance

Note

Note

Available

Models

PARTS TABLE

PART

ORDERING CODE

CIRCUIT

CONFIGURATION

TYPE MARKING

REMARKS

SD103AWS

SD103AWS-E3-08 or SD103AWS-E3-18

Single

S6

Tape and reel

SD103AWS-HE3-08 or SD103AWS-HE3-18

SD103BWS

SD103BWS-E3-08 or SD103BWS-E3-18

Single

S7

SD103BWS-HE3-08 or SD103BWS-HE3-18

SD103CWS

SD103CWS-E3-08 or SD103CWS-E3-18

Single

S8

SD103CWS-HE3-08 or SD103CWS-HE3-18

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

Repetitive peak reverse voltage

SD103AWS

40

V

SD103BWS

30

V

SD103CWS

20

V

350

mA

200

mW

Single cycle surge

10 μs square wave

2A

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

500

K/W

Junction temperature

125

°C

Operating temperature range

-55 to +125

°C

Storage temperature range

-55 to +150

°C