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BLF2425M7LS250P Fiches technique(PDF) 4 Page - Ampleon Netherlands B.V. |
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BLF2425M7LS250P Fiches technique(HTML) 4 Page - Ampleon Netherlands B.V. |
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4 / 11 page ![]() BLF2425M7L250P_2425M7LS250P#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 — 1 September 2015 4 of 11 BLF2425M7L(S)250P Power LDMOS transistor 7.2 Impedance information 7.3 Test circuit Table 8. Typical impedance Measured load-pull data half device. Typical values unless otherwise specified. IDq =20mA; VDS =28V. ZS and ZL defined in Figure 1. f ZS ZL (MHz) ( ) ( ) 2400 2.3 6.3j 3.8 2.7j 2450 3.3 6.0j 2.5 2.9j 2500 4.1 6.0j 3.3 2.3j Fig 1. Definition of transistor impedance 001aak544 gate 1 gate 2 drain 2 drain 1 ZS ZL Printed-Circuit Board (PCB): Rogers RO4350B; thickness = 0.76 mm. See Table 9 for list of components. Fig 2. Component layout for test circuit C5 C4 C2 C9 C19 C1 C6 C10 C7 C8 C3 R2 R3 C12 C16 C17 C18 C11 C14 C13 C15 R1 aaa-004797 |
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