BLC2425M9LS250

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© Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet

Rev. 3 — 20 December 2016

8 of 11

BLC2425M9LS250

Power LDMOS transistor

9. Handling information

[1]

CDM classification C1 is granted to any part that passes after exposure to an ESD pulse of 250 V, but fails

after exposure to an ESD pulse of 500 V.

[2]

HBM classification 1C is granted to any part that passes after exposure to an ESD pulse of 1000 V, but fails

after exposure to an ESD pulse of 2000 V.

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10.

ESD sensitivity

ESD model

Class

Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002

C1 [1]

Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001

1C [2]

Table 11.

Abbreviations

Acronym

Description

CW

Continuous Wave

ESD

ElectroStatic Discharge

LDMOS

Laterally Diffused Metal-Oxide Semiconductor

MTF

Median Time to Failure

SMD

Surface Mounted Device

VSWR

Voltage Standing-Wave Ratio

Table 12.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BLC2425M9LS250 v.3

20161220

Product data sheet

-

BLC2425M9LS250 v.2

Modifications:

• Figure 9 on page 7: updated package outline drawing SOT1270-1

• Section 9 on page 8: updated Handling information

BLC2425M9LS250 v.2

20161021

Product data sheet

-

BLC2425M9LS250 v.1

BLC2425M9LS250 v.1

20160928

Product data sheet

-

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