ART1K6FHSU datasheet(1/18 Pages) AMPLEON

No de pièce	ART1K6FHSU

Description	Power LDMOS transistor

PDF	18 Pages

Scroll/Zoom	100%

Fabricant	AMPLEON [Ampleon Netherlands B.V.]

Site Internet	https://www.ampleon.com

Logo

1 / 18 page

1.

Product profile

1.1 General description

Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor

has been designed to cover a wide range of applications for ISM, broadcast and

communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.

[1]

Production circuit: tp = 100 s;  = 10 %.

[2]

Application circuit: tp = 100 s;  = 10 %.

1.2 Features and benefits

 High breakdown voltage enables class E operation at VDS =48 V

 Suitable for VDS = 50 and 55 V

 Qualified up to a maximum of VDS =55V

 Characterized from 30 V to 55 V for extended power range

 Easy power control

 Integrated dual sided ESD protection enables class C operation and complete switch

off of the transistor

 Excellent ruggedness with no device degradation

 High efficiency

 Excellent thermal stability

 Designed for broadband operation

 For RoHS compliance see the product details on the Ampleon website

ART1K6FH; ART1K6FHS;

ART1K6FHG

Power LDMOS transistor

Rev. 2 — 22 March 2022

Product data sheet

Table 1.

Application information

Test signal

f

VDS

PL

Gp



D

(MHz)

(V)

(W)

(dB)

(%)

CW pulsed [1]

108

50

1400

28.7

77.3

CW pulsed [1]

108

55

1600

29.5

76.0

CW pulsed [2]

352

50

1200

20.0

68.0

Numéro de pièce similaire - ART1K6FHSU

Fabricant	No de pièce	Fiches technique	Description
International Rectifier	ART10012T	217Kb / 12P	28V Input, Triple Output / HYBRID - HIGH RELIABILITY RADIATION HARDENED DC/DC CONVERTER
	ART10012T	140Kb / 12P	HYBRID - HIGH RELIABILITY RADIATION HARDENED DC/DC CONVERTER
	ART10012T/CK	140Kb / 12P	HYBRID - HIGH RELIABILITY RADIATION HARDENED DC/DC CONVERTER
	ART10012T/EM	217Kb / 12P	28V Input, Triple Output / HYBRID - HIGH RELIABILITY RADIATION HARDENED DC/DC CONVERTER
	ART10012T/EM	140Kb / 12P	HYBRID - HIGH RELIABILITY RADIATION HARDENED DC/DC CONVERTER

More results

Description similaire - ART1K6FHSU

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BLF6G20-110	74Kb / 9P	Power LDMOS transistor Rev. 01-28 January 2008
	BLF6G20-45	88Kb / 12P	Power LDMOS transistor Rev. 02-25 August 2008
	BLF6G20-110	90Kb / 10P	Power LDMOS transistor Rev. 03-13 January 2009
	BLF7G22L-130	180Kb / 15P	Power LDMOS transistor Rev. 3-18 November 2010
	BLF2425M7L140	299Kb / 11P	Power LDMOS transistor Rev. 3-6 September 2012
	BLF188XR	227Kb / 15P	Power LDMOS transistor Rev. 5-12 November 2013
	BLA8G1011L(S)-300	200Kb / 14P	Power LDMOS transistor Rev. 2-26 January 2015
	BLC8G22LS-450AV	225Kb / 15P	Power LDMOS transistor Rev. 3-2 June 2015
	BLF6G10-200RN	169Kb / 11P	Power LDMOS transistor Rev. 02-21 January 2010
	BLF6G13L-250P	159Kb / 14P	Power LDMOS transistor Rev. 3-14 October 2011

More results

ART1K6FHSU Fiches technique(PDF) 1 Page - Ampleon Netherlands B.V.

ART1K6FHSU Fiches technique(HTML) 1 Page - Ampleon Netherlands B.V.

Numéro de pièce similaire - ART1K6FHSU

Description similaire - ART1K6FHSU

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Fiches technique Télécharger

Lien URL