MB2M_V01 datasheet(2/4 Pages) VISHAY

2 / 4 page

MB2M, MB4M, MB6M

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Vishay General Semiconductor

Revision: 15-Jul-2020

Document Number: 88660

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Notes

(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads

(2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Derating Curve for Output Rectified Current

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

MB2M

MB4M

MB6M

UNIT

Maximum instantaneous forward

voltage per diode

IF = 0.4 A

1.0

Maximum DC reverse current at rated DC blocking

voltage per diode

TA = 25 °C

5.0

μA

TA = 125 °C

100

Typical junction capacitance per diode

4.0 V, 1 MHz

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MB2M

MB4M

MB6M

UNIT

Typical thermal resistance

RθJA

(1)

°C/W

RθJA

(2)

RθJL

(1)

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

MB2M-E3/45

0.22

100

Tube

100

120

140

160

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Aluminum Substrate

Glass

Epoxy

PCB

Resistive or Inductive Load

Ambient Temperature (°C)

100

f = 60 Hz

f = 50 Hz

A = 40 °C

Single Half Sine-Wave

Number of Cycles

1.0 Cycle

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