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ESDM1053 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce ESDM1053
Description  ESD Protection Diodes Micro?뭦ackaged Diodes for ESD Protection
PDF  6 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ESDM1053 Fiches technique(HTML) 2 Page - ON Semiconductor

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ESDM1053
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
VRWM
I/O Pin to GND
5.5
V
Breakdown Voltage
VBR
IT = 1 mA, I/O Pin to GND
5.8
6.7
9.0
V
Reverse Leakage Current
IR
VRWM = 5.5 V, I/O Pin to GND
0.05
mA
Clamping Voltage
TLP (Note 1)
VC
IPP = 8 A
IPP = 16 A
IPP = 30 A
6.7
7.5
9.0
V
Dynamic Resistance
RDYN
I/O Pin to GND, 100 ns TLP
0.10
W
Reverse Peak Pulse Current
IPP
IEC61000−4−5 (8x20 ms)
5.0
6.0
A
Clamping Voltage (8x20 ms)
VC
IPP = 1.0 A
IPP = 5.0 A
6.0
7.0
8.5
V
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
5.5
7.0
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 1 ns, averaging window; t1 = 70 ns to t2 = 90 ns.
ORDERING INFORMATION
Device
Package
Shipping†
ESDM1053FCT5G
DSN2
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.



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