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ADPA1106ACGZN-R7 Fiches technique(PDF) 18 Page - Analog Devices

No de pièce ADPA1106ACGZN-R7
Description  46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier
PDF  19 Pages
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Fabricant  AD [Analog Devices]
Site Internet  http://www.analog.com
Logo AD - Analog Devices

ADPA1106ACGZN-R7 Fiches technique(HTML) 18 Page - Analog Devices

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Data Sheet
ADPA1106
APPLICATIONS INFORMATION
analog.com
Rev. 0 | 18 of 19
Figure 55. Pulsed Bias at Low Duty Cycle
Transient thermal measurements and analysis were performed at
several different bias pulse widths and duty cycles to obtain the
thermal resistance values listed in Table 7.
Table 7. Pulse Settings and Thermal Resistance Values
Pulse Settings
θJC (°C/W)
Pulse Width (µs)
Duty Cycle (%)
100
10
2.11
200
20
2.82
300
30
3.54
The ADPA1106 amplifier is designed for a low duty-cycle pulsed ap-
plication. Under continuous bias conditions, the thermal resistance
increases to 6.5°C/W. Even at the nominal quiescent bias, VDD1
and VDD2 = 50 V and IDQ = 0.3 A, the 15 W power dissipation
results in a 97.5°C TCHAN rise above TCASE. If TCASE is 85°C, a
TCHAN of 182.5°C results if the device operates continuously.



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