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STM8L052C6 Fiches technique(PDF) 63 Page - STMicroelectronics |
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STM8L052C6 Fiches technique(HTML) 63 Page - STMicroelectronics |
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63 / 103 page ![]() DocID023331 Rev 2 63/103 STM8L052C6 Electrical parameters 97 In the following table, data is based on characterization results, unless otherwise specified. Figure 11. Typ. IDD(LPW) vs. VDD (LSI clock source) Table 20. Total current consumption in Low power wait mode at VDD = 1.8 V to 3.6 V Symbol Parameter Conditions(1) Typ Max Unit IDD(LPW) Supply current in Low power wait mode LSI RC osc. (at 38 kHz) all peripherals OFF TA = -40 °C to 25 °C 33.3 A TA = 55 °C 3.3 3.6 TA = 85 °C 4.4 5 with TIM2 active(2) TA = -40 °C to 25 °C 3.4 3.7 TA = 55 °C 3.7 4 TA = 85 °C 4.8 5.4 LSE external clock(3) (32.768 kHz) all peripherals OFF TA = -40 °C to 25 °C 2.35 2.7 TA = 55 °C 2.42 2.82 TA = 85 °C 3.10 3.71 with TIM2 active (2) TA = -40 °C to 25 °C 2.46 2.75 TA = 55 °C 2.50 2.81 TA = 85 °C 3.16 3.82 1. No floating I/Os. 2. Timer 2 clock enabled and counter is running. 3. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 29. |
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