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STM32WB35CC Fiches technique(PDF) 156 Page - STMicroelectronics |
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STM32WB35CC Fiches technique(HTML) 156 Page - STMicroelectronics |
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156 / 193 page ![]() Electrical characteristics STM32WB55xx STM32WB35xx 156/193 DS11929 Rev 11 6.3.25 SMPS step-down converter characteristics The SMPS step-down converter characteristic are given at 4 MHz clock, with a 20 mA load (unless otherwise specified), using a 10 µH inductor and a 4.7 µF capacitor. 6.3.26 LCD controller characteristics The STM32WB55xx devices embed a built-in step-up converter to provide a constant LCD reference voltage independently from the VDD voltage. An external capacitor Cext must be connected to the VLCD pin to decouple this converter. Table 88. LCD controller characteristics(1) Symbol Parameter Conditions Min Typ Max Unit VLCD LCD external voltage - - 3.6 V VLCD0 LCD internal reference voltage 0 - 2.62 - VLCD1 LCD internal reference voltage 1 - 2.76 - VLCD2 LCD internal reference voltage 2 - 2.89 - VLCD3 LCD internal reference voltage 3 - 3.04 - VLCD4 LCD internal reference voltage 4 - 3.19 - VLCD5 LCD internal reference voltage 5 - 3.32 - VLCD6 LCD internal reference voltage 6 - 3.46 - VLCD7 LCD internal reference voltage 7 - 3.62 - Cext VLCD external capacitance Buffer OFF (BUFEN=0 is LCD_CR register) 0.2 - 2 μF Buffer ON (BUFEN=1 is LCD_CR register) 1-2 ILCD(2) Supply current from VDD at VDD = 2.2 V Buffer OFF (BUFEN=0 is LCD_CR register) -3- μA Supply current from VDD at VDD = 3.0 V Buffer OFF (BUFEN=0 is LCD_CR register) -1.5 - IVLCD Supply current from VLCD (VLCD = 3 V) Buffer OFF (BUFFEN = 0, PON = 0) -0.5 - μA Buffer ON (BUFFEN = 1, 1/2 Bias) -0.6 - Buffer ON (BUFFEN = 1, 1/3 Bias) -0.8 - Buffer ON (BUFFEN = 1, 1/4 Bias) -1- RHN Total High resistor value for Low drive resistive network - 5.5 - MΩ RLN Total Low resistor value for High drive resistive network - 240 - kΩ |
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