ISC4B321P datasheet(1/2 Pages) ISC

No de pièce	ISC4B321P

Description	isc Triacs

PDF	2 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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isc website： www.iscsemi.com

isc & iscsemi is registered trademark

isc Triacs

ISC4B321P

FEATURES

·

With TO-220AB insulated package

·

Suitables for general purpose where high surge current capability is required.

Application such as phase control and tatic switching on inductive or resistive load.

·

Minimum Lot-to-Lot variations for robust device performance and reliable operation

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MIN

UNIT

VDRM

Repetitive peak off-state voltage

800

V

VRRM

Repetitive peak reverse voltage

800

V

IT(RMS)

RMS on-state current (full sine wave)Tj=90℃

24

A

ITSM

Non-repetitive peak on-state current tp=8.3ms

240

A

Tj

Operating junction temperature

125

℃

Tstg

Storage temperature

-40~150

℃

PG(AV)

Average gate power dissipation(Tj=125℃)

1

W

Rth(j-c)

Thermal resistance, junction to case

2.05

℃

/W

ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

IRRM

Repetitive peak reverse current

VR=VRRM,

VR=VRRM, Tj=125℃

0.01

1.0

mA

IDRM

Repetitive peak off-state current

VD=VDRM,

VD=VDRM, Tj=125℃

0.01

1.0

mA

IGT

Gate trigger current

Ⅰ

VD=12V; RL= 33Ω

50

mA

Ⅱ

50

Ⅲ

50

Ⅳ

100

IH

Holding current

IGT= 0.5A, Gate Open

60

mA

VGT

Gate trigger voltage all quadrant VD=12V; RL= 33Ω

1.5

V

VTM

On-state voltage

IT= 40A; tp= 380μs

1.55

V

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